| Autor: |
Kaoru Kohno, Shuta Fujiwara, Shoichi Kurita, N. Shin‐ichi Takahashi, Eiichi Shibano |
| Rok vydání: |
1994 |
| Předmět: |
|
| Zdroj: |
Journal of Crystal Growth. 137:240-244 |
| ISSN: |
0022-0248 |
| DOI: |
10.1016/0022-0248(94)91278-5 |
| Popis: |
AlGaInP is the most promising material for visible wavelength light sources for laser-printing and audio compact disc systems. Unfortunately, it is difficult to grow controllably this crystal by conventional liquid phase epitaxy (LPE) growth, dur to the extremely large distribution coefficient of Al in the In melt. In this work, the AlGaInP layers have been grown in a very short time on an Al0.9Ga0.1As buffer layer from a non-equilibrium solution with a vey high Al fraction. The AlGaInP source melt was prepared by changing the Al mole fraction for a fixed value of Ga and P mole fractions which were for InGaP lattice-matched to GaAs. A mirror-loke surface has been obtained at an Al mole fraction X1Al between 1.96 × 10-5 and 3.21 × 10-4. Photoluminescence measurements indicated that the peak wavelength shifted to the shorter side and show that Al was incorporated into the crystals. The shortest peak wavelegth observed at room temperature was 635 nm from the AlGaInP layer grown at X1Al = 3.21 × 10-4. AlGaAs /AlGaInP / AlGaAs double heterostructure (DH) light emitting diodes (LEDs) were fabricated by this growth method with X1Al = 1.82 × 10-4. The electroluminescence (EL) emission peak at 645 nm with full width at half maximum of 66 meV was obtained at room temperature. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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