A recombination model for a‐Si:H/c‐Si heterostructures

Autor: Manfred Schmidt, Lars Korte, T. F. Schulze, R. Stangl, Caspar Leendertz
Rok vydání: 2010
Předmět:
Zdroj: physica status solidi c. 7:1005-1010
ISSN: 1610-1642
1862-6351
Popis: A semi-analytical model to describe the excess carrier concentration-dependent recombination processes and the charge carrier lifetime in a-Si:H/c-Si heterostructures has been developed. In contrast to previously proposed models it accounts for most relevant physical processes: In addition to bulk recombination processes the recombination via distributed dangling bond defects at the interface is integrated. Furthermore interface band bending depending on the a-Si:H doping and the Fermi-level dependent defect charge is taken into consideration as well as charge carrier diffusion to the interface. Despite its complexity the model allows for rapid computation and is thus well suited for fitting lifetime measurements in order to extract interface parameters. The model is crosschecked for various experimentally relevant situations against the numerical simulation tool AFORS-HET (© 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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