An Investigation of the SET Response of Devices and Differential Pairs in a 32-nm SOI CMOS Technology
| Autor: | Nelson E. Lourenco, Zachary E. Fleetwood, Troy D. England, Nicolas J.-H. Roche, Ickhyun Song, Dale McMorrow, Adrian Ildefonso, Jeffrey H. Warner, Seungwoo Jung, Ani Khachatrian, Robert L. Schmid, S. P. Buchner, Adilson S. Cardoso, Pauline Paki, John D. Cressler |
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| Rok vydání: | 2015 |
| Předmět: |
Physics
Nuclear and High Energy Physics business.industry Soi cmos technology Electrical engineering Silicon on insulator Set (abstract data type) Nuclear Energy and Engineering Single effect Transient response Electrical and Electronic Engineering Differential (infinitesimal) Rf circuit business Block (data storage) |
| Zdroj: | IEEE Transactions on Nuclear Science. 62:2643-2649 |
| ISSN: | 1558-1578 0018-9499 |
| DOI: | 10.1109/tns.2015.2499298 |
| Popis: | The single event effect (SEE) response of devices and differential pairs in a 32-nm SOI CMOS technology is explored using laser-induced carrier injection and TCAD simulations. Both nFETs and pFETs in this technology exhibit similar sensitive area to laser-induced SEE and are strongly dependent on the drain bias condition. TCAD simulations were conducted in order to confirm results and utilize a 3-D mixed-mode simulation approach to more accurately model testing conditions. The differential pair (diff. pair) circuit SEE response extends the discussion to include the use of these devices in a core analog/RF circuit block. The analysis includes the use of floating body (FB) and body-connected (BC) devices. Body-connected FETs tend to exhibit a transient response that is much shorter in duration when compared directly to its floating body counterpart. |
| Databáze: | OpenAIRE |
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