Heavy-ion induced gate damage and thermal destruction in double-trench SiC MOSFETs

Autor:	Lihao Wang, Yunpeng Jia, Xintian Zhou, Yuanfu Zhao, Liang Wang, Tongde Li, Dongqing Hu, Yu Wu, Zhonghan Deng
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials
Zdroj:	Microelectronics Reliability. 137:114770
ISSN:	0026-2714
DOI:	10.1016/j.microrel.2022.114770
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6df4c5925a0db5cfbd4a367649608169 https://doi.org/10.1016/j.microrel.2022.114770 Zobrazit plný text záznamu Full Text from ScienceDirect