Passivation of dopants in InGaP using ECR hydrogenation

Autor:	J. W. Lee, Fan Ren, C. R. Abernathy, William S. Hobson, Stephen J. Pearton
Rok vydání:	1996
Předmět:	Materials science Passivation Dopant Hydrogen Mechanical Engineering Microwave power Inorganic chemistry chemistry.chemical_element Hydrogen passivation Plasma Condensed Matter Physics Electron cyclotron resonance chemistry Mechanics of Materials Torr General Materials Science
Zdroj:	Materials Science and Engineering: B. 38:263-266
ISSN:	0921-5107
Popis:	Hydrogen passivation of Zn acceptors and Si donors in In 0.49 Ga 0.51 P layers has been examined as a function of the microwave power (0–1000 W) and process pressure (1–10 mTorr) of electron cyclotron resonance H 2 discharges. The dopant passivation is much stronger in p-type InGaP than in n-type materials for all plasma conditions, which we ascribe to the more stable bond-centred position for hydrogen in p-InGaP. Reactivation of the passivated dopants begins at ⩽ 300 °C and is complete by 400 °C in n-type material and 450 °C in p-type material.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6de7055588f8efb1cb126b79dd2c1b3d https://doi.org/10.1016/0921-5107(95)01430-6 Zobrazit plný text záznamu Full Text from ScienceDirect