Improved photovoltaic performance of InGaN/GaN solar cells with optimized transparent current spreading layers

Autor:	Y. Wang, Xueqin Lv, Baoping Zhang, Lei-Ying Ying, Xuefen Cai, Z. D. Li, Jiang-Yong Zhang
Rok vydání:	2013
Předmět:	Materials science business.industry law Photovoltaic system Solar cell Optoelectronics General Materials Science General Chemistry Current (fluid) business Layer (electronics) Ohmic contact law.invention
Zdroj:	Applied Physics A. 111:483-486
ISSN:	1432-0630 0947-8396
DOI:	10.1007/s00339-012-7486-1
Popis:	In0.135Ga0.865N/GaN p–i–n solar cells are fabricated and investigated with three types of transparent current spreading layers (TCSLs): Ni/Au layer type (Ni/Au-L), Ni/Au grid type (Ni/Au-G), and ITO layer type (ITO-L). The performance of solar cell is improved with optimized TCSL and the best result is achieved in device with ITO-L. These results indicate that TCSL can strongly affect the device property, and its optimization is necessary in order to obtain better photovoltaic performance.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6dd8d6a68eb20cecf14d25f1a37dc583 https://doi.org/10.1007/s00339-012-7486-1 Zobrazit plný text záznamu Plný text ve formátu PDF