High-performance, cost-effective 2z nm two-deck cross-point memory integrated by self-align scheme for 128 Gb SCM
| Autor: | Hyejung Choi, Jinkook Kim, Hyun Min Lee, Jaeyun Yi, Eung-Rim Hwang, Jeongho Song, Tae-Hoon Kim, Donghoon Kim, Su Jin Chae, Myoungsub Kim, Chang-Youn Hwang, Yun-Seok Chun, Sunglae Cho |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Scheme (programming language) Computer science Chalcogenide Window (computing) 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Deck Set (abstract data type) chemistry.chemical_compound chemistry Etching (microfabrication) 0103 physical sciences Electronic engineering Cross point 0210 nano-technology Storage class memory computer computer.programming_language |
| Zdroj: | 2018 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm.2018.8614680 |
| Popis: | We demonstrate a high-performance and cost-effective cross-point memory (CPM) technology for two-deck 128 Gb storage class memory (SCM). The unit MAT size is 16 Mb consisting of a 2z nm 1S1M (one selector one memory) structure that is patterned by only two ArF-i steps per deck for a low cost per bit. The formidable task of self-align etch is enabled by the use of state-of-the-art etching and integration technology, which otherwise easily leads to hard fail or poor cell characteristics and reliabilities. New phase change materials (N-PCMs) are developed to have a large V t window and a uniform V t distribution for a sufficient read window margin (RWM) and a corresponding low raw bit error rate (RBER). New chalcogenide selectors (NCSs) are also developed to provide low V t instability and very low leakage current. The new CPM is able to provide a sufficient RWM for 16 Mb MATs with very low latencies of write (set ≤ 300 ns) and read (≤ 100 ns). We also demonstrate its decent write disturbance and high reliabilities such as endurance and thermal retention. |
| Databáze: | OpenAIRE |
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