Electron Tunneling Between Si Quantum Dots and Two Dimensional Electron Gas under Optical Excitation at Low Temperatures

Autor:	Tetsuo Endoh, Seiichi Miyazaki, Yukihiro Takada, Yasuteru Shigeta, Shintaro Nomura, Masakazu Muraguchi, Juin-Ichi Iwata, Katsunori Makihara, Yoko Sakurai, Mitsuhisa Ikeda, Kenji Shiraishi
Rok vydání:	2010
Předmět:	Electron density Materials science Quantum dot Quantum point contact Atomic physics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Excitation Quantum tunnelling
Zdroj:	ECS Transactions. 28:369-374
ISSN:	1938-6737 1938-5862
DOI:	10.1149/1.3375623
Popis:	We present results of the electron tunneling between Si-dots and the two-dimensional electron gas (2DEG) under the optical excitation at low temperatures, where modification of the 2DEG is caused by optical generation of the electron-hole pairs. We have found that the gate voltage for electron injection to Si-dots becomes remarkably smaller with increase in optical excitation intensity, while the gate voltage for electron emission shows little dependence. The difference in the observed dependences of the gate voltage for electron injection and emission process is explained our proposal which consider the geometrical matching of initial and final state electron wave functions
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6dd4e1379aef5ee87fc8d8d6a2f66b19 https://doi.org/10.1149/1.3375623 Zobrazit plný text záznamu