HBT lifetime prediction as a function of temperature

Autor:	John Hitt, Ken Decker, Timothy S. Henderson, Buckley Keith M
Rok vydání:	2008
Předmět:	Mean time between failures Materials science Heterojunction bipolar transistor Electronic engineering High-electron-mobility transistor Function (mathematics) Active devices Simulation Bias stress Life testing
Zdroj:	2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop].
DOI:	10.1109/rocs.2008.5483622
Popis:	Make observations on HBT testing and how test conditions affect projected MTTF and Ea. Baseline bias stress data for TQS BiHEMT process active devices: HBT, D-mode pHEMT, E-mode pHEMT.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6dcb542b531946c710ccecc250f53a3c https://doi.org/10.1109/rocs.2008.5483622 Zobrazit plný text záznamu