| Autor: |
K. Hofmann, J. Burgler, P. Roggwiller, E. Halder, Thomas Stockmeier, S. Muller, Wolfgang Fichtner, R. Vuilleumier, M. Westermann, J.-M. Moret, Friedhelm Dr. Bauer, H. Haddon |
| Rok vydání: |
1991 |
| Předmět: |
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| Zdroj: |
IEEE Transactions on Electron Devices. 38:1605-1611 |
| ISSN: |
0018-9383 |
| DOI: |
10.1109/16.85156 |
| Popis: |
2.5-kV thyristor devices have been fabricated with integrated MOS controlled n/sup +/-emitter shorts and a bipolar turn-on gate using a p-channel DMOS technology. Square-cell geometries with pitch variations ranging from 15 to 30 mu m were implemented in one- and two-dimensional arrays with up to 20000 units. The impact of the cell pitch on the turn-off performance and the on-state voltage was studied for arrays with constant cathode area as well as for single-cell structures. By realizing MOS components with submicrometer channel lengths, scaled single cells are shown to turn off with current densities of several kiloamperes per square centimeter at a gate bias of 5 V. In the case of multi-cell ensembles, turn-off performance is limited due to inhomogeneous current distribution. Critical process parameters as well as the device behavior were optimized through multidimensional numerical simulation. > |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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