Comparison of statistical enhancement methods for Monte Carlo semiconductor simulation
| Autor: | T.J.T. Kwan, C.J. Wordelman, C.M. Snell |
|---|---|
| Rok vydání: | 1998 |
| Předmět: |
Physics
Silicon business.industry Monte Carlo method chemistry.chemical_element Semiconductor device Integrated circuit Computer Graphics and Computer-Aided Design Bin Computational physics law.invention Semiconductor chemistry law Dynamic Monte Carlo method Electronic engineering Figure of merit Electrical and Electronic Engineering business Software |
| Zdroj: | IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 17:1230-1235 |
| ISSN: | 0278-0070 |
| DOI: | 10.1109/43.736562 |
| Popis: | Three methods of variable-weight statistical enhancement for Monte Carlo semiconductor device simulation are compared. The steady-state statistical errors and figures of merit for implementations of the multicomb, cloning-rouletting, and splitting-gathering enhancement methods are obtained for bulk silicon simulations. The results indicate that all methods enhance the high-energy distribution tail with comparable accuracy, but that the splitting-gathering method achieves a lower error at low energies by automatically preserving a peak in the bin populations at the peak of the particle energy distribution. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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