Radiation-Induced Deep-Level Traps in CCD Image Sensors

Autor:	Cristian Alexandru Tivarus, William C. McColgin
Rok vydání:	2007
Předmět:	Materials science Silicon Pixel Annealing (metallurgy) business.industry chemistry.chemical_element chemistry Vacancy defect Optoelectronics Irradiation Image sensor business Spectroscopy Dark current
Zdroj:	MRS Proceedings. 994
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-0994-f12-07
Popis:	Dark current spectroscopy (DCS) is used to study deep level traps corresponding to the bright pixels that form the histogram “tails” of irradiated charge-coupled devices (CCD). We found four distinct traps, among which the double vacancy (V2) and the vacancy-phosphorous (VP) have the highest concentrations and generation rates. We show that DCS can be used to examine the annealing mechanisms of silicon defects to concentrations as low as 5 × 107 cm−3.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6db6a1370d1e92321dbb0660c98a11d5 https://doi.org/10.1557/proc-0994-f12-07 Zobrazit plný text záznamu Full text from SpringerLink