High voltage devices added to A 0.13μm high resistivity thin SOI CMOS process for mixed analog-RF circuits

Autor:	L. Boissonnet, S. Chouteau, B. Reynard, O. Bon, C. Raynaud, A. Perrotin, O. Gonnard
Rok vydání:	2006
Předmět:	Integrated injection logic Materials science CMOS business.industry Embedded system Process (computing) Silicon on insulator Optoelectronics High voltage Soi cmos business Power (physics) Electronic circuit
Zdroj:	2005 IEEE International SOI Conference Proceedings.
DOI:	10.1109/soi.2005.1563577
Popis:	We have added to a 0.13/spl mu/m thin SOI CMOS core process a high competitive SOI NLDEMOS which presents excellent power switch and analog characteristics. Measurements have demonstrated that both drift and BC design rules allow to obtain HV devices (BV > 15V) with a low S.Ron and a low leakage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6dac87ef92b1589965098f60bff1009d https://doi.org/10.1109/soi.2005.1563577 Zobrazit plný text záznamu