A modified HICUM model for GaInP/GaAs HBT devices
Autor: | Chinchun Meng, W. Y. Chen, Sheng-Che Tseng, Jen-Yi Su |
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Rok vydání: | 2006 |
Předmět: | |
Zdroj: | Microwave and Optical Technology Letters. 48:780-783 |
ISSN: | 1098-2760 0895-2477 |
DOI: | 10.1002/mop.21474 |
Popis: | A compact physics-based transit-time model is established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit-time frequency versus bias (IC, VCE), especially at low- and medium-current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit-time frequency versus bias (IC, VCE) more precisely. This model has obvious advantages over the VBIC model for showing the relation of ft versus bias (IC, VCE) in the low and medium current regimes for GaInP/GaAs HBT devices. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 780–783, 2006; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.21474 |
Databáze: | OpenAIRE |
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