Autor: |
Tomasz Pozniak, Marcin Janicki, Lukasz Starzak, M. Napieralska, Andrzej Napieralski, Mariusz Zubert, Grzegorz Jablonski |
Rok vydání: |
2012 |
Předmět: |
|
Zdroj: |
Microelectronics Journal. 43:312-320 |
ISSN: |
0026-2692 |
DOI: |
10.1016/j.mejo.2012.01.009 |
Popis: |
The paper presents a SiC merged PiN Schottky diode model dedicated to the dynamic as-well-as very accurate static simulation. The model takes into account the temperature dependence of device characteristics and combines in a single model the behaviour typical for bipolar and unipolar devices. The presented electro-thermal simulations of the diode produce accurate results, consistent with the measurements. The dynamic model verification has been also presented on the example of a boost power converter. |
Databáze: |
OpenAIRE |
Externí odkaz: |
|