Status and Trends in Epitaxy and Defects
| Autor: | Hiroshi Osawa, Fukada Keisuke, Ling Guo, Ishibashi Naoto, Koji Kamei, Kenji Momose, Y. Mabuchi, Yoshitaka Nishihara |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry Mechanical Engineering 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Mechanics of Materials 0103 physical sciences MOSFET Optoelectronics General Materials Science P type doping 0210 nano-technology business |
| Zdroj: | Materials Science Forum. 924:67-71 |
| ISSN: | 1662-9752 |
| Popis: | SiC-powered devices which reduce the power loss, size, and weight of power converters are gradually appearing in the power electronics market. From now on, cost reduction and quality improvement of SiC epitaxial wafers is required to further increase their popularity. This paper describes the state of development of mass production of the epi-wafer at Showa Denko K. K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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