Technique for the Electrochemical Capacitance–Voltage Profiling of Heavily Doped Structures with a Sharp Doping Profile

Autor:	D. S. Frolov, G. E. Yakovlev, V. I. Zubkov
Rok vydání:	2019
Předmět:	010302 applied physics Materials science Silicon business.industry Doping chemistry.chemical_element 02 engineering and technology High-electron-mobility transistor Substrate (electronics) Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy 01 natural sciences Capacitance Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Ion implantation chemistry 0103 physical sciences Optoelectronics 0210 nano-technology business Voltage
Zdroj:	Semiconductors. 53:268-272
ISSN:	1090-6479 1063-7826
Popis:	The specific features of applying electrochemical capacitance–voltage profiling to investigate heavily doped structures with a sharp doping profile are considered. Criteria are presented, and recommendations are given for selection of the optimal measurement parameters, and the necessity of increasing the frequency, at which the capacitance is measured during profiling, is substantiated. The described procedure is considered by the example of profiling p-type silicon structures with ion implantation as well as n-GaAs epitaxial and substrate structures for pHEMT devices.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6d9e14afdde47dad7e4b43497be090fe https://doi.org/10.1134/s1063782619020076 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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