| Autor: |
Rositza Yakimova, Mikael Syväjärvi, V.B. Shuman, V.V. Ratnikov, I.L. Shulpina, N.S. Savkina |
| Rok vydání: |
2005 |
| Předmět: |
|
| Zdroj: |
Materials Science Forum. :265-268 |
| ISSN: |
1662-9752 |
| DOI: |
10.4028/www.scientific.net/msf.483-485.265 |
| Popis: |
The methods of X-ray topography and diffractometry have been applied to characterize the structure of epilayers grown on porous layers. Two geometrical configurations of defects determined to be stacking faults (SF) were revealed: i) with the images of triangular shape with the edge size 560 µm along the directions; ii) linear shape along the [11-20] direction. The sources of SFs are located within the epilayer and start from the epilayer / porous layer interface. We propose that the source of SFs is connected with graphitization of porous layer at the temperature of epitaxy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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