Low writing current magnetoresistive random access memory (MRAM) with side metal pillar write word line (PWWL)
| Autor: | Wen-Chin Lin, Denny Tang, M.J. Kao, Ming-Jinn Tsai, Shiuh Chao, C.C. Hung |
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| Rok vydání: | 2004 |
| Předmět: |
Magnetoresistive random-access memory
Magnetoresistance Field (physics) Computer science business.industry Electrical engineering Condensed Matter Physics Line (electrical engineering) Electronic Optical and Magnetic Materials Magnetic field Memory cell Etching (microfabrication) business Word (computer architecture) |
| Zdroj: | Journal of Magnetism and Magnetic Materials. 282:373-379 |
| ISSN: | 0304-8853 |
| DOI: | 10.1016/j.jmmm.2004.04.087 |
| Popis: | A novel Magnetoresistive random access memory (MRAM) cell with Pillar write word line (PWWL) was proposed. Besides the magnetic field induced by bottom write word line, an additional magnetic field is superimposed into the memory cell from current flowing through the pair of PWWLs. This structure can significantly enhance the magnetic field and can thus reduce the writing current by approximately a factor of 2 as compared to the conventional structure. The field enhancement will be even more pronounced as the MRAM cell is further downsized. The PWWL structure can be formed simultaneously with via etching by the appropriate layout modification. |
| Databáze: | OpenAIRE |
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