Si/SiGe quantum wells: fundamentals to technology
| Autor: | K. Ismail, B. S. Meyerson |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Materials science
Condensed matter physics business.industry Transistor Hardware_PERFORMANCEANDRELIABILITY Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Computer Science::Hardware Architecture Condensed Matter::Materials Science Computer Science::Emerging Technologies CMOS law Hardware_INTEGRATEDCIRCUITS Optoelectronics Condensed Matter::Strongly Correlated Electrons Electronics Electrical and Electronic Engineering business Quantum well Hardware_LOGICDESIGN |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 6:306-310 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/bf00125885 |
| Popis: | In this paper, we will briefly review the growth of Si/SiGe quantum wells and the effect of strain on the bandstructure. Enhanced electron/hole transport properties in such layers will be demonstrated, and their application in electronic devices such as P and N modulation-doped field-effect transistors (MODFET) will be discussed. At the circuit level, the use of these devices in a complimentary metal-oxide-semiconductor (CMOS) circuit implementation will be considered. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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