Heterogeneous integration of GaN device layer by epitaxial film bonding

Autor:	Mitsuhiko Ogihara, Shin Yokoyama, Yoshiteru Amemiya
Rok vydání:	2019
Předmět:	Materials science Thin layers Silicon business.industry chemistry.chemical_element Gallium nitride Substrate (electronics) Epitaxy law.invention chemistry.chemical_compound chemistry law Optoelectronics business Layer (electronics) Light-emitting diode
Zdroj:	ISDCS
DOI:	10.1109/isdcs.2019.8719268
Popis:	Heterogeneous integration of GaN light emitting diode (LED) thin layers with dissimilar material guest substrates by epitaxial film bonding (EFB) has been studied. Light emitting operation on the guest substrate has been proven.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6d8486040c90ac560f336132b4b517a4 https://doi.org/10.1109/isdcs.2019.8719268 Zobrazit plný text záznamu