Analysis of Single-Photon-Detection Characteristics of GaInAs/InP Avalanche Photodiodes
| Autor: | Kazuyoshi Itoh, Eiji Yagyu, Tsuyoshi Nishioka, Yasunori Tokuda, Mitsuru Matsui, Tetsuyuki Kurata, Kohei Sugihara |
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| Rok vydání: | 2010 |
| Předmět: |
Physics
APDS Physics::Instrumentation and Detectors business.industry Photodetector Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Avalanche photodiode Atomic and Molecular Physics and Optics law.invention Tunnel effect chemistry.chemical_compound Optics chemistry law Indium phosphide Geiger counter Optoelectronics Electrical and Electronic Engineering Photonics business Quantum tunnelling |
| Zdroj: | IEEE Journal of Quantum Electronics. 46:1444-1449 |
| ISSN: | 1558-1713 0018-9197 |
| DOI: | 10.1109/jqe.2010.2050765 |
| Popis: | An effective method to analyze the origin of primary dark counts is presented for single-photon-detection avalanche photodiodes (APDs) operated in the gated Geiger modes. It is revealed that a band-to-band tunneling model reproduces the experimental data very well for GaInAs/InP single-photon-detection APDs, while a phonon-assisted tunneling model fails. Therefore, we concluded that primary dark counts are dominated by the band-to-band tunneling for the GaInAs/InP single-photon-detection APDs. Then, we calculate the dark count probability and the detection efficiency by modeling the band-to-band tunneling. It is found that the ratio of the dark count probability to the detection efficiency is reduced by decreasing the impurity concentration of the multiplication region and of the p-type window. |
| Databáze: | OpenAIRE |
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