Effects of substrate temperature and near-substrate plasma density on the properties of dc magnetron sputtered aluminum doped zinc oxide

Autor:	Nathan W. Schmidt, J. R. Doyle, David R. Callender, Thomas S. Totushek, William A. Kimes
Rok vydání:	2003
Předmět:	Diffraction Materials science Analytical chemistry General Physics and Astronomy chemistry.chemical_element Substrate (electronics) symbols.namesake chemistry Electrical resistivity and conductivity Hall effect Aluminium X-ray crystallography Cavity magnetron symbols Langmuir probe
Zdroj:	Journal of Applied Physics. 94:5514-5521
ISSN:	1089-7550 0021-8979
Popis:	The effects of substrate temperature and near-substrate plasma density are studied for reactively sputtered dc magnetron aluminum doped zinc oxide (ZnO:Al). Plasma density is varied using an unbalanced magnetron along with external Helmholtz coils, and is characterized using flat and cylindrical Langmuir probes. The substrate ion-to-neutral flux ratio was varied from 0.2 to about 3.5 using this technique. The ZnO:Al films were characterized by resistivity, transmission, Hall effect, and theta-two theta x-ray diffraction. Under conditions of low plasma density, for substrate temperatures below 65 °C the substrate temperature does not have a significant influence on film quality, and the film quality is relatively poor. By 88 °C the film quality is rapidly improving with temperature, and at 135 °C high quality films are produced. For substrate temperatures below 65 °C, increased plasma density at the substrate has a significant beneficial effect on the optoelectronic quality of the films. At 105 °C this eff...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6d730f3cd133df4d1cf90a14a785597a https://doi.org/10.1063/1.1615694 Zobrazit plný text záznamu