AlGaN/GaN High Electron Mobility Transistor Grown and Fabricated on ZrTi Metallic Alloy Buffer Layers
| Autor: | Martha R. McCartney, Stephen J. Pearton, Alex Welsh, Shihyun Ahn, Robert Weiss, Fan Ren, David J. Smith, Francisco Machuca, Ivan I. Kravchenko, Yi Hsuan Lin |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Alloy Transistor 02 engineering and technology High-electron-mobility transistor engineering.material 01 natural sciences Buffer (optical fiber) Electronic Optical and Magnetic Materials law.invention Full width at half maximum Lattice constant Transmission electron microscopy law Lattice (order) 0103 physical sciences 0202 electrical engineering electronic engineering information engineering engineering Optoelectronics business |
| Zdroj: | ECS Journal of Solid State Science and Technology. 6:S3078-S3080 |
| ISSN: | 2162-8777 2162-8769 |
| DOI: | 10.1149/2.0161711jss |
| Popis: | AlGaN/GaN high electron mobility transistors (HEMTs) were demonstrated for structures grown on ZrTi metallic alloy buffer layers, which provided lattice matching of the in-plane lattice parameter ("a-parameter") to hexagonal GaN. The quality of the GaN buffer layer and HEMT structure were confirmed with X-ray 2θ and rocking scans as well as cross-section transmission electron microscopy (TEM) images. The X-ray 2θ scans showed full widths at half maximum (FWHM) of 0.06°, 0.05° and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM of the lower section of the HEMT structure containing the GaN buffer layer and the AlN/ZrTi/AlN stack on the Si substrate showed that it was important to grow AlN on the top of ZrTi prior to growing the GaN buffer layer. The estimated threading dislocation (TD) density in the GaN channel layer of the HEMT structure was in the 108 cm−2 range. |
| Databáze: | OpenAIRE |
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