Modulated reflectance and absorption characterization of single crystal GaN films
| Autor: | D. K. Wickenden, A. Giordana, A. Estes Wickenden, D. K. Gaskill |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Absorption spectroscopy
Chemistry Nucleation Analytical chemistry Gallium nitride Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials chemistry.chemical_compound Impurity Materials Chemistry Sapphire Electrical and Electronic Engineering Absorption (electromagnetic radiation) Single crystal |
| Zdroj: | Journal of Electronic Materials. 23:509-512 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02670652 |
| Popis: | The results of the first application of electrolyte electroreflectance and photoreflectance to single crystal films of gallium nitride grown by organometallic vapor phase epitaxy on sapphire are presented. Absorption measurements were also performed and used to complement the results of the other techniques. The crystalline quality of the samples was evaluated, and the effects of impurity reductions and different nucleation processes were studied. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink