Characterization of the Post Dry‐Etch Cleaning of Silicon for Ti‐Self‐Aligned Silicide Technology
| Autor: | Serge Vanhaeleemeersch, Thierry Conard, Mikhail R. Baklanov, Yong‐Bae Kim, Muriel de Potter |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Silicon
Renewable Energy Sustainability and the Environment technology industry and agriculture Analytical chemistry chemistry.chemical_element Substrate (electronics) Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry X-ray photoelectron spectroscopy Etching (microfabrication) Silicide Materials Chemistry Electrochemistry Surface layer Dry etching Reactive-ion etching |
| Zdroj: | Journal of The Electrochemical Society. 146:1549-1556 |
| ISSN: | 1945-7111 0013-4651 |
| Popis: | The Si surface after reactive ion etching (RIE) and different cleaning procedures was characterized by angle resolved X‐ray photoelectron spectroscopy, high‐resolution transmission microscopy, and atomic force microscopy. It was shown that polymers, silicon carbides (Si‒C bonds), and chemisorbed fluorine (Si‒F), cover the silicon surface after RIE in a mixture. The last two residues penetrate the surface layer of a silicon substrate. polymers are removed by oxygen plasma but Si‒C and Si‒F bonds related residues cannot be removed by "oxygen plasma/diluted HF" treatment. These compounds can be removed only by additional etching of the silicon surface layer. According to our experimental conditions a silicon consumption of 2.8 nm was enough to eliminate these compounds. By comparing different cleaning recipes and conditions it was found that ‐plasma/HF/APM (ammonia‐hydrogen peroxide mixture) provides the best cleaning characteristics. APM removes fluorine and carbon contamination by precise, controlled etching of silicon with high etch selectivity toward an spacer. The silicon surface after the cleaning is quite smooth. It was demonstrated that the post spacer‐etch cleaning of ‐plasma/HF/APM is a robust process for Ti‐salicide technology with respect to the reduction of the leakage current between poly‐Si and source/drain. © 1999 The Electrochemical Society. All rights reserved. |
| Databáze: | OpenAIRE |
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