GMR-Based Integrated Current Sensing in SiC Power Modules With Phase Shift Error Reduction
| Autor: | Muhammad H. Alvi, Robert D. Lorenz, Minhao Sheng |
|---|---|
| Rok vydání: | 2022 |
| Předmět: |
Materials science
business.industry 020208 electrical & electronic engineering Detector Phase (waves) Energy Engineering and Power Technology dBc Bandwidth extension 020206 networking & telecommunications 02 engineering and technology Sense (electronics) Insulated-gate bipolar transistor Power module 0202 electrical engineering electronic engineering information engineering Optoelectronics Electrical and Electronic Engineering business Galvanic isolation |
| Zdroj: | IEEE Journal of Emerging and Selected Topics in Power Electronics. 10:3477-3487 |
| ISSN: | 2168-6785 2168-6777 |
| DOI: | 10.1109/jestpe.2020.3028275 |
| Popis: | In the literature, giant magnetoresistive (GMR) point field detectors (PFDs) were integrated in terminals of Si IGBT modules for galvanically isolated current sensing in machine drives. This work presents a PFD-based current sensing system that can be fully integrated in the direct bonded copper (DBC) region of SiC power modules. The physics of phase shift errors caused by the Nickel (Ni) plating in the SiC power module is investigated. To address current sensing phase errors, a real-time phase shift reduction method is proposed. A bandwidth extension method is proposed to meet the sensing requirement of SiC devices that can switch at tens of kilohertz. The phase shift reduction and bandwidth extension methods are experimentally combined to sense the currents in the SiC DBC regions. The proposed current sensing has high bandwidth, minimal phase errors and low position sensitivity. The sensed currents can be used for high performance control and protection of SiC module-based converters. |
| Databáze: | OpenAIRE |
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