| Autor: |
Franz Hirler, Holger Kapels |
| Rok vydání: |
2009 |
| Předmět: |
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| Zdroj: |
2009 21st International Symposium on Power Semiconductor Devices & IC's. |
| ISSN: |
1943-653X |
| DOI: |
10.1109/ispsd.2009.5158061 |
| Popis: |
The drift zone of superjunction devices consists of compensated n- and p-columns. The manufacturability of such devices is based on the thorough control of acceptors and donator concentrations. Shrinking the cell pitch to a few micrometers requires considerably better compensation control compared to 10µm pitch devices. A new concept that applies a stack of Y-shaped field plates to a charge compensated device is investigated by numerical simulation. The YFET concept provides a 7 times larger compensation process window compared to a device with oxide filled trenches, allowing much higher doping concentrations. A specific on-resistance of 0.65Ωmm2 at a breakdown voltage of 680V can be achieved at a cell pitch of about 4.6µm. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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