High-Resolution Proximity Exposure through a Phase Shifter Mask

Autor:	Akira Imai, Saburo Nonogaki
Rok vydání:	1993
Předmět:	Diffraction Materials science business.industry General Engineering General Physics and Astronomy Integrated circuit Photoresist law.invention Wavelength Optics Resist law Optoelectronics Light beam Photolithography business Phase shift module
Zdroj:	Japanese Journal of Applied Physics. 32:4845
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.32.4845
Popis:	A simple method to fabricate fine lines of photoresist has been developed. The method utilizes a mask containing an equal-width line-and-space pattern of the half-wavelength phase shifter. A film of photoresist formed on a substrate is placed in close proximity to the mask and exposed through the mask by flooding with a beam of light. The beam, diffracted by the mask, produces an interference pattern, which extends long enough to expose the film patternwise. The film is then developed to form a resist pattern. An array of 0.2-µm-spaced, 0.1-µm-wide lines of a positive photoresist has been obtained by this method using the i-line with a peak intensity at the wavelength of 0.365 µm. Calculation based on a rigorous solution of the two-dimensional diffraction problem indicates that a high-contrast 0.1 µm line-and-space exposure using the i-line is feasible if the light is polarized.
Databáze:	OpenAIRE
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