Effect of rf Power on the Properties of a-SiCS:H:F Films by rf Sputtering Using SF6

Autor:	Hiromu Iwata, Isamu Nakaaki, Nobuo Saito, Tomuo Yamaguchi
Rok vydání:	2004
Předmět:	Range (particle radiation) Materials science Sputtering Band gap RF power amplifier Analytical chemistry Electrical and Electronic Engineering Sputter deposition Conductivity Condensed Matter Physics Deposition (law) Surfaces Coatings and Films Amorphous solid
Zdroj:	SHINKU. 47:473-476
ISSN:	1880-9413 0559-8516
DOI:	10.3131/jvsj.47.473
Popis:	Amorphous SiCS : H : F films have been deposited by a reactive rf magnetron sputtering of Si target in Ar-CH4 and SF6 gas mixtures. The effects of RF power P under the deposition on the electrical and optical properties of the films were investigated in the range of P from 75 to 400 W. With decreasing P below 100 W, the bonding configuration of constituent elements changes apparently; Si-C and C-H bonds increase and S- or F-related bonds could be observed. The results that the optical bandgap increases and the conductivity decreases rapidly below 100 W could be attributed to these structural changes, which involve the increase in the disorderness, owing to the complicated bonding structure.
Databáze:	OpenAIRE
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