| Autor: |
Rafael Jaramillo, Riley E. Brandt, Tonio Buonassisi, Leizhi Sun, Vera Steinmann, Niall M. Mangan, Jian V. Li, Roy G. Gordon, Jeremy R. Poindexter, Katy Hartman |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE 40th Photovoltaic Specialist Conference (PVSC). |
| DOI: |
10.1109/pvsc.2014.6925404 |
| Popis: |
We preform device simulations of a tin sulfide (SnS) device stack using SCAPS to define a path to 10% efficient devices. We determine and constrain a baseline device model using recent experimental results on one of our 3.9% efficient cells. Through a multistep fitting process, we find a conduction band cliff of −0.2 eV between SnS and Zn(O,S) to be limiting the open circuit voltage (V OC ). To move towards a higher efficiency, we can optimize the buffer layer band alignment. Improvement of the SnS lifetime to >1 ns is necessary to reach 10% efficiency. Additionally, absorber-buffer interface recombination must be suppressed, either by reducing recombination activity of defects or creating a strong inversion layer at the interface. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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