A Novel Surface Preparation and Post-Etch Removal Technique for InGaAs Sidewalls

Autor: G. A. Porkolab, O. King, S. Agarwala, Y. J. Chen, Seyed Ahmad Tabatabaei, F.G. Johnson, Dennis Stone, S.A. Merritt, Mario Dagenais
Rok vydání: 1997
Předmět:
Zdroj: MRS Proceedings. 477
ISSN: 1946-4274
DOI: 10.1557/proc-477-317
Popis: This paper describes in detail a surface preparation, and post-etch removal technique developed for InGaAs sidewalls. It illustrates the results demonstrating the effect of sidewall post-etch, surface preparation, and surface passivation on the performance of high speed InGaAs detectors. Dark current density for circular diodes with a diameter size varying between 10 and 100 μm was measured at a reverse bias voltage of −5 V. The effectiveness of various surface preparation techniques was studied by measuring the immediate improvement in dark current density, as well as its long-term stability. The benefits of this new technique compared to other techniques we have investigated include improved device characteristics, long-term stability, as well as a much less critical process to achieve optimum surface properties.
Databáze: OpenAIRE