| Autor: |
M. S. Rahim, Jais Lias, N. D. M. Said, Anis Suhaili Bakri, Mohd Zainizan Sahdan, S. H. A. Yunus |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
AIP Conference Proceedings. |
| ISSN: |
0094-243X |
| Popis: |
Growth of titanium dioxide (TiO2) films on the glass substrate were carried out by using the double zone chemical vapor deposition (CVD) technique. Titanium butoxide was used as a precursor for deposited TiO2 film and oxygen gas used into CVD. The temperature of the precursor and substrate was kept is 206°C and 60°C respectively. The structure of TiO2 film growth with three different conditions during annealing process after deposited using CVD. The three different condition is anneal with argon gas, nitrogen gas and without any gas. The annealing temperature was kept is 500°C for 1 hour. The XRD data showed the highly oriented anatase phase at (101) peak orientation. The surface morphology showed the different structure by using FESEM. The structure of TiO2 film annealing without gas showed a uniform film and homogeneous structure compared others. The roughness of the TiO2 film was measured by AFM. It was found that the lower roughness is film anneal without any gas. The resistivity has been measured usi... |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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