Electrical and Optical Studies of Defect Structure of HgCdTe Films Grown by Molecular Beam Epitaxy
| Autor: | I. I. Izhnin, Sergey A. Dvoretsky, A. V. Voitsekhovskii, A. Yu. Bonchyk, M. V. Yakushev, Z. Świątek, A. G. Korotaev, Nikolay N. Mikhailov, P. Ozga, K. D. Mynbaev, V. S. Varavin, H. V. Savytsky, E. I. Fitsych |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Doping General Physics and Astronomy chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Micro raman spectroscopy chemistry 0103 physical sciences AS2 Optoelectronics Ion milling machine 0210 nano-technology Spectroscopy business Arsenic Molecular beam epitaxy |
| Zdroj: | Russian Physics Journal. 59:442-445 |
| ISSN: | 1573-9228 1064-8887 |
| Popis: | Electrical and optical studies of defect structure of HgCdTe films grown by molecular beam epitaxy (MBE) are performed. It is shown that the peculiarity of these films is the presence of neutral defects formed at the growth stage and inherent to the material grown by MBE. It is assumed that these neutral defects are the Te nanocomplexes. Under ion milling, they are activated by mercury interstitials and form the donor centers with the concentration of 1017 cm–3, which makes it possible to detect such defects by measurements of electrical parameters of the material. Under doping of HgCdTe with arsenic using high temperature cracking, the As2 dimers are present in the arsenic flow and block the neutral Te nanocomplexes to form donor As2Te3 complexes. The results of electrical studies are compared with the results of studies carried out by micro-Raman spectroscopy. |
| Databáze: | OpenAIRE |
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