Representation of an Improved Heterostructure Junctionless Tunneling FET Based on the Drain/Gate Oxide and Hetero-Dielectric Engineering
| Autor: | Abdollah Eskandarian, Seyed Ali Sedigh Ziabari, Maryam Abedini |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance Gate dielectric Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Capacitance Electronic Optical and Magnetic Materials law.invention Threshold voltage Capacitor law Gate oxide 0103 physical sciences Band diagram Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Journal of Electronic Materials. 48:5865-5874 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/s11664-019-07335-y |
| Popis: | In order to suppress the ambipolar current of a junctionless tunneling field effect transistor (JLTFET), this study focuses on the effect of the gate metal on the drain semiconductor, which was modeled as a capacitor by the analytical survey. The capacitance behavior and, consequently, the electric field varies with respect to the material of the capacitor’s dielectric, which leads to some changes to the energy band diagram and the tunneling barrier width at the drain/channel interface. To investigate the effect of the gate metal on the drain semiconductor, an HfO2 oxide pocket (OP) with variable height is considered at the drain side. It is found that the increase of the height of the oxide pocket increases the tunneling barrier width at the drain/channel interface, and hence, the ambipolar state current (Iamb) and off state current (Ioff) are reduced. Next, the influence of the hetero-gate-dielectric (HD) structure, called an OP-HD-JLTFET, is studied and the optimal length for the high-k gate dielectric is extracted at the source side, which represents improved behavior in terms of on state current (Ion), transconductance (gm) and the cut-off frequency (fT) due to the reduction of the tunneling barrier width at the source/channel interface. Then to enhance the electrical characteristics of the device, a heterostructure source/channel interface (OP-HD-HS-JLTFET) is applied wherein gallium antimonide (GaSb) with a narrow band gap is assigned to the source region. The proposed device exhibit significant improvements in Iamb, Ion, Ioff, Ion/Ioff, gm, fT, gain bandwidth product (GBW), subthreshold swing (SS) and threshold voltage (Vth) compared to the conventional JLTFET. |
| Databáze: | OpenAIRE |
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