Performance improvement of n-TiO2/p-Si heterojunction by forming of n-TiO2/polyphenylene/p-Si anisotype sandwich heterojunction

Autor: M. Koca, Sakir Aydogan, Duygu Ekinci, Züleyha Kudaş
Rok vydání: 2021
Předmět:
Zdroj: Materials Science in Semiconductor Processing. 121:105436
ISSN: 1369-8001
DOI: 10.1016/j.mssp.2020.105436
Popis: The n-TiO2/polyphenylene (PPh)/p-Si heterojunction devices were fabricated in which PPh film and TiO2 top layer were grown on p-Si substrates by diazonium modification method and cathodic electrodeposition, respectively. The XPS, UV–vis diffuse reflectance and STM analyses of the films were performed. After the characterization of deposited films and the fabrications of n-TiO2/PPh/p-Si sandwich devices, the electrical measurements of nine devices were carried out from the current–voltage (I–V) characteristics, at room temperature. The I–V characteristics of n-TiO2/PPh/p-Si heterojunctions were compared with TiO2/p-Si heterojunctions, one of them was analysed in more detailed and it was observed that the n-TiO2/PPh/p-Si gave better performance than TiO2/p-Si heterojunctions such that lower ideality factor, higher rectification ratio and more stable reverse current characteristics. Then, the main device parameters of n-TiO2/PPh/p-Si were compared with many devices reported in literature based on TiO2/p-Si device and TiO2 preparation techniques. Furthermore, the rectification ratio of n-TiO2/PPh/p-Si heterojunction was 9.42 × 105, while it was 5.80 × 102 for TiO2/p-Si heterojunction. Later, the capacitance-voltage (C–V) and conductance-voltage (G-V) measurements of the n-TiO2/PPh/p-Si heterojunction was performed depending on applied frequency and bias and it was observed that the values of capacitance and conductance were found a strongly function of bias voltage.
Databáze: OpenAIRE
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