The Effect of Post-Anodization Chemical Etching on Porous Silicon Investigated by Means of Photoluminescence and Ir Spectroscopy

Autor:	Tetsuya Yamazaki, Yasuo Tsutsumi, Nobutomo Uehara, Masato Ohmukai, Akiharu Kobayashi, Shinji Fujihara
Rok vydání:	1999
Předmět:	symbols.namesake Photoluminescence Materials science Etching (microfabrication) symbols Analytical chemistry Infrared spectroscopy Fourier transform infrared spectroscopy Raman spectroscopy Porous silicon Absorption (electromagnetic radiation) Isotropic etching
Zdroj:	MRS Proceedings. 560
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-560-157
Popis:	We studied the effect of post-anodization chemical etching on porous silicon by means of photoluminescence (PL), Fourier transform infrared (FTIR) absorption and Raman spectroscopy. We performed these measurements with repeating etching and then observed the variation of the spectra. On the basis of the correlation between PL and FTIR spectral changes, the PL emission at 660 and 730 nm in PL spectra stems from Si-H2, and Si-H clusters at surface, respectively. Raman spectra show a close relation between PL emission at 850 nm and nanocrystallites in porous silicon. In addition, chemical etching contributes to the promotion of nanocrystallites and to dissolving them.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6cbd7cf64b6d77439d6c735c9b43bd2a https://doi.org/10.1557/proc-560-157 Zobrazit plný text záznamu Full text from SpringerLink