First Demonstration of Heterogeneous IGZO/Si CFET Monolithic 3D Integration with Dual Workfunction Gate for Ultra Low-power SRAM and RF Applications
Autor: | S.-W. Chang, T.-H. Lu, C.-Y. Yang, C.-J. Yeh, M.-K. Huang, C.-F. Meng, P.-J. Chen, T.-H. Chang, Y.-S. Chang, J.-W. Jhu, T.-Z. Hong, C.-C. Ke, X.-R. Yu, W.-H. Lu, M. A. Baig, T.-C. Cho, P.-J. Sung, C.-J. Su, F.-K. Hsueh, B.-Y. Chen, H.-H. Hu, C.-T. Wu, K.-L. Lin, W. C.-Y. Ma, D.-D. Lu, K.-H. Kao, Y.-J. Lee, C.-L. Lin, K.-P. Huang, K.-M. Chen, Y. Li, S. Samukawa, T.-S. Chao, G.-W. Huang, W.-F. Wu, W.-H. Lee, J.-Y. Li, J.-M. Shieh, J.-H. Tarng, Y.-H. Wang, W.-K. Yeh |
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Rok vydání: | 2021 |
Zdroj: | 2021 IEEE International Electron Devices Meeting (IEDM). |
Databáze: | OpenAIRE |
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