Defect evaluation in InGaAs field effect transistors with HfO2or Al2O3dielectric

Autor:	Jiongjiong Mo, Erik Lind, Guntrade Roll, Sofia Johansson, Lars-Erik Wernersson
Rok vydání:	2015
Předmět:	Materials science Physics and Astronomy (miscellaneous) business.industry Transconductance Dielectric Capacitance Subthreshold slope Gallium arsenide chemistry.chemical_compound chemistry Gate oxide MOSFET Optoelectronics Field-effect transistor business
Zdroj:	Applied Physics Letters. 106:203503
ISSN:	1077-3118 0003-6951
Popis:	The performance of InGaAs metal oxide semiconductor field effect transistors with Al2O3 or HfO2 as gate oxide is evaluated and compared. The Al2O3 transistors show the lowest subthreshold slope and mid gap Dit, however, the HfO2 transistors reach a higher maximum transconductance (gmax) due to the higher oxide capacitance. Both high-κ dielectrics show a gm-frequency dispersion due to tunneling into border traps with a negligible activation energy as determined from temperature dependent measurements. The total amount of trapped charge at border traps is lower in the HfO2 devices. Scaling the HfO2 thickness further reduces the gm-frequency dispersion, possibly due to detrapping to the gate electrode.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6cad6e09d8cb6e4f9a3893308b487541 https://doi.org/10.1063/1.4921483 Zobrazit plný text záznamu