Anti-phase boundaries of GaAs on Si
| Autor: | Hidefumi Mori, Masafumi Yamaguchi, Yoshio Itoh |
|---|---|
| Rok vydání: | 1990 |
| Předmět: | |
| Zdroj: | Journal of Crystal Growth. 103:363-366 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(90)90212-4 |
| Popis: | We have examined the formation of the anti-phase boundary of GaAs films grown on lens-shaped Si substrates by low pressure metalorganic chemical vapor deposition. The pattern of the anti-phase boundary shows four-fold symmetry and changes depending on thermal cleaning conditions (atmosphere and temperature) of the Si substrates. It has been found that the creation of anti-phase boundaries is governed by the Si surface step structure and that As plays an important role in the formation of double-layer step. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|