| Autor: |
Akihiro Kajita, Li Zhang, Tadashi Sakai, Takashi Matsumoto, Naoshi Sakuma, Makoto Wada, Daisuke Nishide, Taishi Ishikura, Masayuki Katagiri |
| Rok vydání: |
2014 |
| Předmět: |
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| Zdroj: |
2014 IEEE International Reliability Physics Symposium. |
| DOI: |
10.1109/irps.2014.6861141 |
| Popis: |
Graphene is a promising material to replace copper interconnect metallization under 10 nm in width. We report a method for evaluating graphene interconnect wiring structure by conductive atomic force microscopy (C-AFM), which enables direct measurement of the 2D-resistance distribution and coverage evaluation of multilayer graphene (MLG) grown on Ni interconnects using a 300 mm damascene process. It is demonstrated that the coverage of MLG upon Ni can be estimated more precisely by C-AFM than that by back-scattered electron scanning electron microscopy (BSE-SEM) observation. We also measured the resistance of the MLG/Ni conductor and confirmed conduction paths of the MLG/Ni interconnect. Process dependence of MLG shows that lower local resistance corresponds to higher G band and D band intensity ratio (G/D ratio) in Raman spectra. C-AFM is demonstrated to be a potential technique for local conductance evaluation of next generation interconnects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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