Inter-trap tunneling in vanadium doped TiO2 sol-gel films
| Autor: | M. Nicolescu, Jose M. Calderon-Moreno, Mariuca Gartner, Luminita Predoana, D. Spassov, H. Stroescu, G. Kitin, Maria Zaharescu, S. Simeonov, Silviu Preda, A. Szekeres, M. Covei |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
Anatase
Materials science business.industry Band gap Mechanical Engineering Doping Vanadium chemistry.chemical_element 02 engineering and technology Electron Atmospheric temperature range 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences chemistry Mechanics of Materials Electrical resistivity and conductivity Electric field Optoelectronics General Materials Science 0210 nano-technology business |
| Zdroj: | Materials Research Bulletin. 127:110854 |
| ISSN: | 0025-5408 |
| DOI: | 10.1016/j.materresbull.2020.110854 |
| Popis: | Multilayered anatase TiO2 films doped with 0.03 and 1.2 at.% vanadium, deposited on p-type Si substrates by the sol-gel layer-by-layer method are studied to reveal the influence of doping on the electrical properties of the films. Undoped TiO2 and doped TiO2:V films were incorporated in Metal-Insulator-Semiconductor structures and their current-voltage characteristics were measured and analyzed. The specific resistivity is in the order of 105 Ohm.cm, decreasing by increasing the electrical field, an evidence of the electron injection in these TiO2 and TiO2:V films. The current through the films is non-conduction band current limited with trap charge via deep levels with energy distribution in the TiO2 bandgap. In the 77−300 K temperature range the current at high electric fields is carried out by the electron inter-trap tunneling in these TiO2 films. |
| Databáze: | OpenAIRE |
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