Tailoring MgZnO/CdSeTe Interfaces for Photovoltaics
| Autor: | Joel N. Duenow, Walajabad S. Sampath, Eric Colegrove, Wyatt K. Metzger, David S. Albin, Drew E. Swanson, Tursun Ablekim, Tushar M. Shimpi, Craig L. Perkins, Matthew O. Reese, Sanjini U. Nanayakkara, Xin Zheng, Carey Reich |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Band gap business.industry Photovoltaic system 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Cadmium telluride photovoltaics Electronic Optical and Magnetic Materials law.invention law Photovoltaics 0103 physical sciences Solar cell Optoelectronics Electrical and Electronic Engineering 0210 nano-technology business Layer (electronics) Deposition (law) Transparent conducting film |
| Zdroj: | IEEE Journal of Photovoltaics. 9:888-892 |
| ISSN: | 2156-3403 2156-3381 |
| Popis: | Mg x Zn1- x O (MZO) shows great promise to replace CdS as a buffer layer in CdTe-based solar cells. It is more transparent, and the MZO bandgap and electron density can be tuned, thus providing flexibility in controlling the conduction band offsets and recombination rates between transparent conductive oxide/MZO and MZO/CdSeTe interfaces. Integrating this material into solar cell devices has been frustrated by the common observation of abnormal current–voltage curves. Simulations indicate that this anomalous behavior can be attributed to front interface barrier effects. Experiments demonstrate that this common MZO interface problem can be resolved experimentally by surface preparation, preheat steps, and removing oxygen during absorber deposition and CdCl2 treatment. Oxygen during the cell fabrication process is likely to alter MZO properties and MZO/CdSeTe band alignment. After addressing these interface issues and modest optimization, devices with high short-circuit density of 29 mA/cm2 and efficiency above 16% are demonstrated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|