| Autor: |
Young W. Ok, Ujjwal Das, Ajay Upadhyaya, Robert Theisen, Tasnim K. Mouri, Ajeet Rohatgi |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). |
| Popis: |
Phosphorus (n+) and boron (p+) diffused n-type textured Cz Si wafers are passivated by two different methods: gas phase H 2 S reaction and quinhydrone-methanol (QH-MeOH) solution. The dopant diffused surface passivation quality, quantified by saturation current density (J 0 ), strongly depends on the diffusion type and the passivation method. H 2 S reaction at 550°C passivates n+ diffused surface as good as state-of-the-art Si oxide/silicon nitride stack (SiO 2 /SiN X ), while QH-MeOH passivates p+ diffused surface to the same level as state-of-the-art atomic layer deposited aluminum oxide/silicon nitride stack (Al 2 O 3 /SiN X ). |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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