HIGH-TEMPERATURE AMORPHOUS HAFNIA (HfO2) FOR MICROELECTRONICS
| Autor: | Xiaojie Lou, Finlay D. Morrison, James F. Scott, Ming Zhang, M. Miyake, Osamu Tsuji, T. J. Leedham, Toshiaki Tatsuta |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Mineralogy chemistry.chemical_element law.invention symbols.namesake law Materials Chemistry Surface roughness Microelectronics Deposition (phase transition) Electrical and Electronic Engineering Crystallization biology business.industry Condensed Matter Physics Hafnia biology.organism_classification Electronic Optical and Magnetic Materials Hafnium Amorphous solid chemistry Chemical engineering Control and Systems Engineering Ceramics and Composites symbols business Raman spectroscopy |
| Zdroj: | Integrated Ferroelectrics. 74:165-172 |
| ISSN: | 1607-8489 1058-4587 |
| DOI: | 10.1080/10584580500414176 |
| Popis: | We have found that a hafnia precursor (hafnium bis-isopropoxy bis-thd) for chemical solution deposition (CSD) yields a crystallization temperature ca. 80°C above that usually found for CSD film deposition (e.g., 521°C for Hf-butoxide). These results are considered in terms of two models: the coordination oligomerism model of Turova and Yanovskaya, and a model of competing surface assembly mechanisms from monomeric precursors; although both are compatible with Raman data on film crystallisation temperatures, DTA/TG results on bulk samples support the competing surface assembly model, as do differing values of surface roughness for the different precursors. Implications for commercial production of hafnia gate oxides capable of withstanding conventional FET front-end processing are emphasised. |
| Databáze: | OpenAIRE |
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