A new concept for the lateral DMOS transistor for smart power IC's

Autor:	Irenee Pages, Juan Buxo, P. Rossel, Frédéric Morancho, M. Zitouni, H. Tranduc
Rok vydání:	2003
Předmět:	Engineering business.industry Transistor Electrical engineering Integrated circuit law.invention Smart power CMOS law Trench Hardware_INTEGRATEDCIRCUITS Electronic engineering Power MOSFET business Hardware_LOGICDESIGN Voltage Diode
Zdroj:	11th International Symposium on Power Semiconductor Devices and ICs. ISPSD'99 Proceedings (Cat. No.99CH36312).
DOI:	10.1109/ispsd.1999.764055
Popis:	In this paper, a new concept of lateral DMOSFET for smart power integrated circuits is proposed, in which a vertical trench is used under the gate end in the drift region.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c801f524e62f2b6c96c00d67404a030 https://doi.org/10.1109/ispsd.1999.764055 Zobrazit plný text záznamu