Photoacoustic imaging of voids in direct wafer bonding

Autor:	M.D. Silva, Carlos Kuranaga, J. R. Senna, A. C. Gracias
Rok vydání:	2000
Předmět:	Photoacoustic effect Materials science Silicon business.industry Wafer bonding chemistry.chemical_element Semiconductor device engineering.material Bismuth chemistry Coating Thermal engineering Optoelectronics Wafer business Instrumentation
Zdroj:	Review of Scientific Instruments. 71:1869-1872
ISSN:	1089-7623 0034-6748
DOI:	10.1063/1.1150553
Popis:	We demonstrate photoacoustic thermal imaging of the voids occurring at the interface of directly bonded silicon wafers. The wafers are not touched by probes, minimizing wafer contamination, and the technique does not require the outer surfaces of the bonded wafers to be polished. The method is effective for infrared-opaque materials, as demonstrated by coating a silicon bonded pair with bismuth and obtaining an improvement in the contrast.
Databáze:	OpenAIRE
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