Temperature-dependent terahertz time-domain spectroscopy of 3D, 2D, and 0D semiconductor heterostructures
| Autor: | Elmer Estacio, John Daniel Vasquez, Der-Jun Jang, Arnel Salvador, Neil Irvin Cabello, Alexander De Los Reyes, Che-Yung Chang, Lorenzo Lopez, Armando Somintac, Hannah Bardolaza |
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| Rok vydání: | 2020 |
| Předmět: |
Photoluminescence
Materials science Terahertz radiation business.industry Physics::Optics Context (language use) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Condensed Matter::Materials Science Semiconductor Electric field Optoelectronics Electrical and Electronic Engineering Terahertz time-domain spectroscopy business Spectroscopy Semiconductor heterostructures |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 31:6321-6327 |
| ISSN: | 1573-482X 0957-4522 |
| Popis: | Carrier transport in semiconductors with different dimensionalities, i.e., 3D (bulk), 2D (QW), and 0D (QD), were investigated via temperature-dependent terahertz time-domain spectroscopy (THz-TDS). The optical properties and recombination dynamics in the samples were probed via photoluminescence spectroscopy. The temperature-dependence of the THz emission from the samples was explained in the context of the drift-diffusion model using the dominant THz radiation mechanism. The THz emission from diffusion-type THz emitters such as p- and n-InAs decreases as temperature increases due to mobility decrease. Conversely, the THz emission from drift-type THz emitters such as SI-GaAs, GaAs QW, and InAs QD was found to increase with temperature due to the increase in the driving electric field. In summary, THz-TDS can be utilized to gain qualitative insights on the temperature-dependent transport characteristics and establish dominant THz radiation mechanisms. |
| Databáze: | OpenAIRE |
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