Multiple atomic configurations of inversion domain boundaries in GaN grown on (111)Si

Autor:	R García, G Nouet, A. M. Sanchez, S I Molina, P Ruterana, F. J. Pacheco
Rok vydání:	2018
Předmět:	Materials science Inversion (discrete mathematics) Computational physics Domain (software engineering)
Zdroj:	Microscopy of Semiconducting Materials 2001 ISBN: 9781351074629 Microscopy of Semiconducting Materials 2001
DOI:	10.1201/9781351074629-70
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6c6ba36f823e5a2e6bc7d6bc792f05c7 https://doi.org/10.1201/9781351074629-70 Zobrazit plný text záznamu