Transition in (001) AlGaAs/AlAs/GaAs double‐barrier quantum structure for infrared photodetection
| Autor: | V. W. L. Chin, Tanakorn Osotchan, T. L. Tansley |
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| Rok vydání: | 1996 |
| Předmět: |
Physics
Condensed matter physics Oscillator strength Superlattice Physics::Optics General Physics and Astronomy Heterojunction Photodetection Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Tight binding Quantum well infrared photodetector Electronic band structure |
| Zdroj: | Journal of Applied Physics. 80:5342-5347 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.363473 |
| Popis: | Optical transitions for the (001) Al0.3Ga0.7As/AlAs/GaAs double‐barrier superlattices are evaluated by a semiempirical, tight‐binding calculation. The oscillator strength between the hole and electron states confined in either Γ‐ or X‐like well are investigated as a function of AlAs slab thickness. Intersub‐band transition within the conduction band, including Γ‐ and X‐like superlattice (SL) states, is described for a quantum well infrared photodetector (QWIP). We found that for a specific design structure, it is possible to achieve the dual wavelength QWIP with comparable oscillator strength for the 3–5 μm and 8–14 μm atmospheric windows. In addition, by varying the AlAs barrier thickness, the characteristics of bound‐to‐continuous and bound‐to‐quasibound QWIPs are related to the stationary discrete SL states. As the AlAs thickness increases, the bound‐to‐continuous state transition becomes weak while the bound‐to‐quasibound state transition becomes more significant. Optical coupling between X‐like state... |
| Databáze: | OpenAIRE |
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